Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices

被引：0

作者：

Avner Rothschild, Jonathan ^{[1
]}

Cohen, Aya ^{[1
]}

Brusilovsky, Anna ^{[1
]}

Kornblum, Lior ^{[1
]}

Kauffmann, Yaron ^{[1
]}

Amouyal, Yaron ^{[1
]}

Eizenberg, Moshe ^{[1
]}

机构：

[1] Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel

来源：

Journal of Applied Physics | 2012年 / 112卷 / 01期

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