Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices

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作者：
Avner Rothschild, Jonathan [1 ]
Cohen, Aya [1 ]
Brusilovsky, Anna [1 ]
Kornblum, Lior [1 ]
Kauffmann, Yaron [1 ]
Amouyal, Yaron [1 ]
Eizenberg, Moshe [1 ]
机构：
[1] Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel
来源：
Journal of Applied Physics | 2012年 / 112卷 / 01期
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