Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices

被引：0
|
作者：
Avner Rothschild, Jonathan [1 ]
Cohen, Aya [1 ]
Brusilovsky, Anna [1 ]
Kornblum, Lior [1 ]
Kauffmann, Yaron [1 ]
Amouyal, Yaron [1 ]
Eizenberg, Moshe [1 ]
机构：
[1] Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000, Israel
来源：
Journal of Applied Physics | 2012年 / 112卷 / 01期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] Fermi level tuning using the Hf-Ni alloy system as a gate electrode in metal-oxide-semiconductor devices
    Rothschild, Jonathan Avner
    Cohen, Aya
    Brusilovsky, Anna
    Kornblum, Lior
    Kauffmann, Yaron
    Amouyal, Yaron
    Eizenberg, Moshe
    JOURNAL OF APPLIED PHYSICS, 2012, 112 (01)
  • [2] Work function tuning of the TixTayN metal gate electrode for advanced metal-oxide-semiconductor devices applications
    Cheng, Chin-Lung
    Liu, Chien-Wei
    Jeng, Jin-Tsong
    APPLIED PHYSICS LETTERS, 2007, 90 (06)
  • [3] Modulations in effective work function of platinum gate electrode in metal-oxide-semiconductor devices
    Chandra, S. V. Jagadeesh
    Fortunato, E.
    Martins, R.
    Choi, Chel-Jong
    THIN SOLID FILMS, 2012, 520 (14) : 4556 - 4558
  • [4] A GATE-QUALITY DIELECTRIC SYSTEM FOR SIGE METAL-OXIDE-SEMICONDUCTOR DEVICES
    IYER, SS
    SOLOMON, PM
    KESAN, VP
    BRIGHT, AA
    FREEOUF, JL
    NGUYEN, TN
    WARREN, AC
    IEEE ELECTRON DEVICE LETTERS, 1991, 12 (05) : 246 - 248
  • [5] Tungsten silicide for the alternate gate metal in metal-oxide-semiconductor devices
    Roh, K
    Youn, S
    Yang, S
    Roh, Y
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2001, 19 (04): : 1562 - 1565
  • [6] Characterization of Graphene Gate Electrodes for Metal-Oxide-Semiconductor Devices
    Yanbin An
    Aniruddh Shekhawat
    Ashkan Behnam
    Eric Pop
    Ant Ural
    MRS Advances, 2017, 2 (2) : 103 - 108
  • [7] Effects of Hf contamination on the properties of silicon oxide metal-oxide-semiconductor devices
    Kang, CS
    Onishi, K
    Kang, L
    Lee, JC
    APPLIED PHYSICS LETTERS, 2002, 81 (26) : 5018 - 5020
  • [8] Investigation of the W-TiN metal gate for metal-oxide-semiconductor devices
    Youn, S
    Roh, K
    Yang, S
    Roh, Y
    Kim, KS
    Jang, YC
    Lee, NE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2001, 19 (04): : 1591 - 1594
  • [9] CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTOR IN COMMON-GATE ELECTRODE ARRANGEMENT
    LUKES, Z
    SOLID-STATE ELECTRONICS, 1966, 9 (01) : 21 - +
  • [10] Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices
    Ahn, Jaesoo
    Geppert, Irina
    Gunji, Marika
    Holland, Martin
    Thayne, Iain
    Eizenberg, Moshe
    McIntyre, Paul C.
    APPLIED PHYSICS LETTERS, 2011, 99 (23)
12345