Investigation of Ni induced deep levels in N-type Si by a temperature dependence of piezoelectric photothermal signals

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作者：
Sato, Shoichiro [1 ]
Ito, Atsushi [1 ]
Tada, Susumu [1 ,2 ]
Tanaka, Shuji [1 ,3 ]
Fukuyama, Atsuhiko [1 ,2 ]
Ikari, Tetsuo [1 ]
机构：
[1] Sato, Shoichiro
[2] Ito, Atsushi
[3] 1,Tada, Susumu
[4] 1,Tanaka, Shuji
[5] 1,Fukuyama, Atsuhiko
[6] Ikari, Tetsuo
来源：
Sato, S. (sato@pem.miyazaki-u.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 41期
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页码：3376 / 3378
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