Investigation of Ni induced deep levels in N-type Si by a temperature dependence of piezoelectric photothermal signals

被引：0
|
作者：
Sato, Shoichiro [1 ]
Ito, Atsushi [1 ]
Tada, Susumu [1 ,2 ]
Tanaka, Shuji [1 ,3 ]
Fukuyama, Atsuhiko [1 ,2 ]
Ikari, Tetsuo [1 ]
机构：
[1] Sato, Shoichiro
[2] Ito, Atsushi
[3] 1,Tada, Susumu
[4] 1,Tanaka, Shuji
[5] 1,Fukuyama, Atsuhiko
[6] Ikari, Tetsuo
来源：
Sato, S. (sato@pem.miyazaki-u.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 41期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
5
引用
收藏
页码：3376 / 3378
相关论文
共 50 条
  • [21] TEMPERATURE DEPENDENCE OF RATE OF FALL OF ELECTRON DENSITY IN N-TYPE GE AND N-TYPE SI DURING FAST-NEUTRON IRRADIATION
    STAROSTIN, KL
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1569 - +
  • [22] Investigation of nonradiative transition processes in p- and n-type silicon single crystals by piezoelectric photothermal spectroscopy
    Memon, AA
    Fukuyama, A
    Sato, S
    Ikari, T
    REVIEW OF SCIENTIFIC INSTRUMENTS, 2003, 74 (01): : 592 - 594
  • [23] Temperature dependence of a CrSi2 Schottky barrier on n-type and p-type Si
    Aniltürk, ÖS
    Turan, R
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (12) : 1060 - 1064
  • [24] INVESTIGATION OF TEMPERATURE DEPENDENCE OF DETECTION PROPERTIES OF N-TYPE INSB IN MILLIMETER AND SUBMILLIMETER BANDS
    VYSTAVKIN, AN
    GUBANKOV, VN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (08): : 968 - +
  • [25] Temperature dependence of terahertz radiation from n-type InSb and n-type InAs surfaces
    Kono, S
    Gu, P
    Tani, M
    Sakai, K
    APPLIED PHYSICS B-LASERS AND OPTICS, 2000, 71 (06): : 901 - 904
  • [26] Temperature dependence of terahertz radiation from n-type InSb and n-type InAs surfaces
    S. Kono
    P. Gu
    M. Tani
    K. Sakai
    Applied Physics B, 2000, 71 : 901 - 904
  • [27] INVESTIGATION OF CLUSTERS OF COMPENSATING CENTERS IN N-TYPE SI
    VITMAN, RF
    VITOVSKII, NA
    LEBEDEV, AA
    MASHOVETS, TV
    NALBANDYAN, LV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (11): : 1278 - 1280
  • [28] TEMPERATURE DEPENDENCE OF CARRIER LIFETIME IN N-TYPE GAAS
    KOLCHANO.NM
    NASLEDOV, DN
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (04): : 876 - +
  • [29] TEMPERATURE-DEPENDENCE OF MAGNETOPHOTOCONDUCTIVITY IN N-TYPE INSB
    SKOUNTZOS, PA
    HADJICONTIS, BE
    HALOULOS, SG
    EUTHYMIOU, PC
    SOLID STATE COMMUNICATIONS, 1981, 37 (05) : 445 - 447
  • [30] Temperature dependence of the cyclotron mass in n-type Cds
    Devreese, JT
    Fomin, VM
    Gladilin, VN
    Imanaka, Y
    Miura, N
    PHYSICA B, 2001, 298 (1-4): : 207 - 210
12345