Dose-rate dependence of damage buildup in 3 C -SiC

The influence of the defect generation rate on radiation damage processes in SiC remains poorly understood. Here, we use a combination of ion channeling and transmission electron microscopy to systematically study the dose-rate dependence of damage buildup in 3C-SiC bombarded in the temperature range of 25-200 °C with 500 keV Ar ions. The results reveal a pronounced dose-rate effect, whose magnitude increases close-to-linearly with temperature. When ion dose and temperature are held constant, the dose-rate dependence of the damage level is nonlinear, with saturation at high dose rates. Electron microscopy reveals that the average size of stable defect clusters increases with increasing dose rate. These findings have important implications for understanding and predicting radiation damage in SiC. © 2017 Author(s).