Tailoring the 4H-SiC/SiO2 MOS-interface for SiC-based power switches

被引：0
|
作者：
Mikhaylov, Aleksey I. [1 ]
Afanasyev, Alexey V. [1 ]
Luchinin, Victor V. [1 ]
Reshanov, Sergey A. [2 ]
Schöner, Adolf [2 ]
Knoll, Lars [3 ]
Minamisawa, Renato A. [3 ]
Alfieri, Giovanni [3 ]
Bartolf, Holger [3 ]
机构：
[1] Micro-And Nanoelectronics Department, St. Petersburg State Electrotechnical University LETI, St. Petersburg,197376, Russia
[2] Ascatron AB, Electrum 207,Kista,16440, Sweden
[3] ABB Schweiz AG, 5405 Baden-Dattwil, Aargau, Switzerland
来源：
Japanese Journal of Applied Physics | 2016年 / 55卷 / 8S2期
关键词：
Number:; www.speed-fp7.org; Acronym:; -; Sponsor:; Sponsor: Physicians' Services Incorporated Foundation; Sponsor: Paul Scherrer Institut;
D O I：
08PC04
中图分类号：
学科分类号：
摘要：
Silicon carbide
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