Tailoring the 4H-SiC/SiO2 MOS-interface for SiC-based power switches

被引：0

作者：

Mikhaylov, Aleksey I. ^{[1
]}

Afanasyev, Alexey V. ^{[1
]}

Luchinin, Victor V. ^{[1
]}

Reshanov, Sergey A. ^{[2
]}

Schöner, Adolf ^{[2
]}

Knoll, Lars ^{[3
]}

Minamisawa, Renato A. ^{[3
]}

Alfieri, Giovanni ^{[3
]}

Bartolf, Holger ^{[3
]}

机构：

[1] Micro-And Nanoelectronics Department, St. Petersburg State Electrotechnical University LETI, St. Petersburg,197376, Russia

[2] Ascatron AB, Electrum 207,Kista,16440, Sweden

[3] ABB Schweiz AG, 5405 Baden-Dattwil, Aargau, Switzerland

来源：

Japanese Journal of Applied Physics | 2016年 / 55卷 / 8S2期

关键词：

Number:; www.speed-fp7.org; Acronym:; -; Sponsor:; Sponsor: Physicians' Services Incorporated Foundation; Sponsor: Paul Scherrer Institut;

D O I：

08PC04

中图分类号：

学科分类号：

摘要：

Silicon carbide

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