Analysis of Program Speed Characteristics Having Non-ideal Channel Profile in 3D NAND Flash Memory

被引：0
作者：
Lee, Jaewoo [1 ]
Kim, Yungjun [2 ]
Shin, Yoocheol [2 ]
Park, Seongjo [2 ]
Kang, Hojong [2 ]
Kang, Daewoong [3 ]
Kang, Myounggon [1 ]
机构：
[1] Korea Natl Univ Transportat, Dept Elect Engn, Chungju 380702, South Korea
[2] Dept SK Hynix NAND PI, 2091 Gyeongchung Daero, Icheon Si, Gyeonggi Do, South Korea
[3] Seoul Natl Univ, Next Generat Semicond Convergence & Open Sharing S, Seoul 151747, South Korea
来源：
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2024年 / 24卷 / 04期
关键词：
3D NAND flash memory; channel profile; electric field; program speed; threshold voltage;
D O I：
10.5573/JSTS.2024.24.4.387
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
study presents an in-depth investigation of the channel profile and program speed of non-ideal vertical 3-dimensional (3D) NAND Flash Memory. Using 3D technology computer-aided design (TCAD) simulations, the channel profiles were transformed into oxide-nitride-oxide (O/N/O) structures, providing insights into their impact on the device performance. Step-by-step programming was conducted for the initial state of each channel profile. Upon applying the programmed voltage, variations in the E-field of the tunneling oxide were observed based on the channel profile. Consequently, the concentration of the trapped electrons in the nitride, depending on the channel profile, was identified. Therefore, this study analyzed the influence of E-field differences due to channel profiles on the program speed and investigated vulnerable structures.
引用
收藏
页码：387 / 392
页数：6
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