Two-dimensional analytical models for double-gate (DG) strained-Si metal-oxide-semiconductor field transistor with vertical gaussian doping profile

被引：0

作者：

Li J. ^{[1
]}

Wu X. ^{[1
]}

Xi Z. ^{[1
]}

Hu S. ^{[1
]}

Li M. ^{[1
]}

机构：

[1] School of Information and Electrical Engineering, Hunan University of Science and Technology, Xiangtan

来源：

Zhongnan Daxue Xuebao (Ziran Kexue Ban)/Journal of Central South University (Science and Technology) | 2016年 / 47卷 / 04期

基金：

中国国家自然科学基金;

关键词：

Gaussian doping; Strained Si; Threshold voltage;

D O I：

10.11817/j.issn.1672-7207.2016.04.017

中图分类号：

学科分类号：

摘要：

Considering that diffusion, threshold voltage adjustment and ion implantation process cause the device channel doping distribution to be uneven, a symmetrical double-gate strained-Si metal-oxide-semiconductor field transistor (MOSFET) with a vertical Gaussian doping profile was proposed, and the two-dimensional surface potential model and threshold voltage model for this MOSFET were studied to solve Poisson's equation. The effects of Gaussian doping straggle parameter σn on surface potential and threshold voltage were investigated. The influence of Ge fraction in the relaxed layer on the surface potential and threshold voltage models was analyzed. Both models of DG MOSFET with Gaussian doping and uniform doping were compared, respectively. SCEs (short-channel effect) and (Drain-Induced-Barrier-lowering) DIBL were analyzed. The results show that the doping distribution has great influence on the device such as surface potential and threshold voltage. © 2016, Central South University of Technology. All right reserved.

引用

页码：1203 / 1208

页数：5

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