Near-infrared luminescence in doped Bi4Ge3O12 crystals

被引：0
作者：
Yu, Ping-Sheng [1 ]
Su, Liang-Bi [2 ]
Xu, Jun [2 ]
机构：
[1] School of Materials Engineering, Yancheng Institute of Technology, Yancheng
[2] Key Laboratory of Transparent and Opto-Functional Inorganic Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai
来源：
Faguang Xuebao/Chinese Journal of Luminescence | 2015年 / 36卷 / 03期
关键词：
Bi[!sub]4[!/sub]Ge[!sub]3[!/sub]O[!sub]12[!/sub; Near infrared; Photoluminescence;
D O I：
10.3788/fgxb20153603.0283
中图分类号：
学科分类号：
摘要：
Mg and Ca doped Bi4Ge3O12 (BGO) crystals were grown by using Czochralski (Cz) technique, and Cl doped BGO crystal was prepared by Vertical Bridgman (VB) method. The absorption, photoluminescence (PL) and PL lifetime spectra were systematically investigated. The results reveal that the emission intensity of these doped BGO is weaker than that of pure BGO in visible region. Near infrared (NIR) emission is observed in doped BGO under 808 nm and/or 980 nm laser diodes (LDs) excitation, and the NIR emission should be ascribed to a changed Bi-related active center or lower valence Bi ions. The valence state of doped ions could be key to achieving the NIR emission in BGO crystals, and the doped ions with same valence could play the similar roles in our experiments. ©, 2015, Chines Academy of Sciences. All right reserved.
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页码：283 / 287
页数：4
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