Plasma charging damage of ultra-thin gate-oxide - the measurement dilemma

被引：0

作者：

Cheung, Kin P. ^{[1
]}

Mason, Philip ^{[1
]}

Hwang, David ^{[1
]}

机构：

[1] Bell Lab

来源：

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings | 2000年

关键词：

Computer simulation - Current density - Current voltage characteristics - Electric breakdown - Gates (transistor) - Integrated circuit layout - Leakage currents - Oxides - Reliability;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

We examined the problem of detecting plasma charging damage in deep submicron technology where the gate-oxide is ultra-thin. From the viewpoint of damage impacting gate-oxide reliability, we show that the current available method is incapable to provide sufficient sensitivity.

引用

页码：10 / 13