Switching characteristics of 3kV 4H-SiC GTO thyristors

被引：0
|
作者：
Fedison, J.B. [1 ]
Chow, T.P. [1 ]
Agarwal, A. [1 ]
Ryu, S. [1 ]
Singh, R. [1 ]
Kordina, O. [1 ]
Palmour, J. [1 ]
机构：
[1] Rensselaer Polytechnic Inst, Troy, United States
来源：
| 2000年 / IEEE, Piscataway, NJ, United States卷
关键词：
Anodes - Carrier mobility - Electric currents - Electric field effects - High temperature effects - Ion implantation - Ionization - Nitrogen - Silicon carbide - Switching - Temperature - Threshold voltage;
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学科分类号：
摘要：
An overview is given on the switching characteristics of 3kV 4H-SiC GTO thyristors having high current capability, fast turn-off, and large turn-off gain. These GTOs have the highest current handling capability, highest blocking voltage, and highest turn-off gain for a single SiC device so far.
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