Formation of denuded zone and bulk micro-defects in floating zone silicon

被引：0

作者：

Li, Chuanbo ^{[1
]}

Li, Huaixiang ^{[1
]}

Liu, Guirong ^{[1
]}

Guo, Chenghua ^{[1
]}

Zhang, Hua ^{[1
]}

Xue, Chengshan ^{[1
]}

机构：

[1] Inst. of Semi-conduct., Shandong Normal Univ., Ji'nan 250014, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2002年 / 23卷 / 04期

关键词：

Annealing - Defects - Semiconductor doping - Surface roughness;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A denuded zone and bulk micro-defects are described in the floating zone silicon grown in hydrogen ambience and irradiated with neutrons. The formation of micro-defects is associated with the damage of neutron transmutation doping, the catalyzing of hydrogen and the conditions of annealing. The first-step annealing temperature has big influence on the size of the defects. The higher temperature of the first-step annealing, the bigger the size of the defects. During annealing the defects have a course of growing, which become the biggest size after annealing at 1100°C for 2 h. The quality of the silicon wafer has big influence on the formation of denuded zone which always lies in non-polished side and the denuded zone has not been found on the surface in the both-side polished silicon wafer after the annealing.

引用

页码：382 / 387