Study on the construction and reliability of back-gate mono-layer graphene field effect transistor

High-quality mono-layer graphene films were prepared by use of the technique of low pressure chemical vapor deposition (LPCVD). The as-prepared graphene was used to construct a back-gate mono-layer graphene field effect transistor by a simple process i.e.: The as-prepared mono-layer graphene was firstly transferred onto the surface area of SiO2/Si substrate covered with two parallel arranged heat release tapes with a gap distance about 500 μm. The graphene strip(about 10 000 μm×500 μm) closely combined with the SiO2/Si substrate was obtained by heating and cutting. Finally, the Au electrodes were deposited on the surface of graphene strip by use a mask. The results of electrical properties measurements showed that the graphene strip was in good ohm contact with Au electrodes. The hole mobility of graphene was up to 735 cm2/(V·s) at room temperature and the graphene exhibited an unique bipolar characteristic. The hysteresis behaviors in the transfer characteristics curves of back-gate mono-layer graphene field effect transistors were observed and become more obvious with the increase of gate voltage, which exhibited high properties reliability.