Spatial variations in stress and crystal quality in diamond turned ZnSe surfaces measured by Raman spectroscopy

被引:11
|
作者
Shojaee, S.A. [1 ]
Harriman, T.A. [1 ]
Qi, Y. [1 ]
Lucca, D.A. [1 ]
Dutterer, B.S. [2 ]
Davies, M.A. [2 ]
Suleski, T.J. [3 ]
机构
[1] School of Mechanical and Aerospace Engineering, Oklahoma State University, Stillwater
[2] Center for Precision Metrology, University of North Carolina at Charlotte, Charlotte
[3] Center for Optoelectronic and Optical Communication, University of North Carolina at Charlotte, Charlotte
关键词
Crystal quality; Diamond turning; Raman spectroscopy; Residual stress; ZnSe;
D O I
10.1016/j.mfglet.2014.01.001
中图分类号
学科分类号
摘要
Polycrystalline ZnSe specimens were diamond turned using a range of feed rates and depths of cut. Confocal Raman spectroscopy was used to estimate the residual stress and resulting crystal quality based on changes in the LO mode spectral center and peak width, respectively. Spatial mapping of the LO mode spectral center and peak width indicated variation in the stress and crystal quality that coincided with the microstructure. These spatial variations were consistent with spatial variations in the surface roughness as measured by atomic force microscopy, indicating a relationship between the resulting damage and crystallographic orientation of the grains and twins. © 2014 Society of Manufacturing Engineers (SME). Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:35 / 39
页数:4
相关论文
共 29 条
  • [1] Phase transformation and residual stress probed by Raman spectroscopy in diamond-turned single crystal silicon
    Jasinevicius, R. G.
    Duduch, J. G.
    Montanari, L.
    Pizani, P. S.
    PROCEEDINGS OF THE INSTITUTION OF MECHANICAL ENGINEERS PART B-JOURNAL OF ENGINEERING MANUFACTURE, 2008, 222 (09) : 1065 - 1073
  • [2] In-situ Raman spectroscopy analysis of re-crystallization annealing of diamond turned silicon crystal
    Jasinevicius, Renato G.
    Duduch, Jaime Gilberto
    Pizani, Paulo Sergio
    JOURNAL OF THE BRAZILIAN SOCIETY OF MECHANICAL SCIENCES AND ENGINEERING, 2007, 29 (01) : 49 - 54
  • [3] Temperature dependence of stress in CVD diamond films studied by Raman spectroscopy
    Dychalska, Anna
    Fabisiak, Kazimierz
    Paprocki, Kazimierz
    Dudkowiak, Alina
    Szybowicz, Miroslaw
    MATERIALS SCIENCE-POLAND, 2015, 33 (03): : 620 - 626
  • [4] Epitaxial growth of mosaic diamond: Mapping of stress and defects in crystal junction with a confocal Raman spectroscopy
    Shu, Guoyang
    Dai, Bing
    Ralchenkq, V. G.
    Khomich, A. A.
    Ashkinazi, E. E.
    Bolshakov, A. P.
    Bokova-Sirosh, S. N.
    Liu, Kang
    Zhao, Jiwen
    Han, Jiecai
    Zhu, Jiaqi
    JOURNAL OF CRYSTAL GROWTH, 2017, 463 : 19 - 26
  • [5] A Raman spectroscopy investigation into the influence of thermal treatments on the residual stress of polycrystalline diamond
    McNamara, Declan
    Alveen, Patricia
    Damm, Signe
    Carolan, Declan
    Rice, James H.
    Murphy, Neal
    Ivankovic, Alojz
    INTERNATIONAL JOURNAL OF REFRACTORY METALS & HARD MATERIALS, 2015, 52 : 114 - 122
  • [6] The research of effects of brittle single crystal material's anisotropy on the diamond turned surface quality
    Zhao, QL
    Dong, S
    Zhao, T
    ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGY 2000, 2000, 4231 : 231 - 240
  • [7] Application of Raman spectroscopy to determine stress in polycrystalline diamond tools as a function of tool geometry and temperature
    Erasmus, R. M.
    Comins, J. D.
    Mofokeng, V.
    Martin, Z.
    DIAMOND AND RELATED MATERIALS, 2011, 20 (07) : 907 - 911
  • [8] Measurement of stress near dislocation walls in a ZnSe signal crystal by Raman scattering tomography
    Tsuru, T
    Sakai, K
    Ma, MY
    Ogawa, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (10): : 5977 - 5980
  • [9] Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy
    Daisuke Kosemura
    Maki Hattori
    Tetsuya Yoshida
    Toshikazu Mizukoshi
    Atsushi Ogura
    Journal of Electronic Materials, 2010, 39 : 694 - 699
  • [10] Evaluation of Stress and Crystal Quality in Si During Shallow Trench Isolation by UV-Raman Spectroscopy
    Kosemura, Daisuke
    Hattori, Maki
    Yoshida, Tetsuya
    Mizukoshi, Toshikazu
    Ogura, Atsushi
    JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (06) : 694 - 699