Accurate analysis of top gate effect of a typical triple-gate fin-type FET using three-dimensional device simulation

被引：0

作者：

Tsutsumi, Toshiyuki ^{[1
]}

Nakamura, Takeshi ^{[2
]}

Yokoyama, Norihiro ^{[1
]}

Fukuoka, Shota ^{[1
]}

机构：

[1] Department of Computer Science, School of Science and Technology, Meiji University, Kawasaki,214-8571, Japan

[2] Recomm Co., Ltd., Japan

来源：

Japanese Journal of Applied Physics | 2016年 / 55卷 / 06期

关键词：

616.1 Heat Exchange Equipment and Components - 701.1 Electricity: Basic Concepts and Phenomena - 714.2 Semiconductor Devices and Integrated Circuits;

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摘要：

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