Adsorbate effects of the surface structure of 6H-SiC(0001) √3 × √3-R30°

被引：0

作者：

Aoyama, Tomohiro ^{[1
]}

Hisada, Yoshiyuki ^{[2
]}

Mukainakano, Shinichi ^{[2
]}

Ichimiya, Ayahiko ^{[1
]}

机构：

[1] Department of Quantum Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8603, Japan

[2] Research Laboratories, Denso Corporation, Komenoki-cho, Nisshin-shi, Aichi, Japan

来源：

Materials Science Forum | 2002年 / 389-393卷 / 01期

关键词：

Adsorbates - Auger electron spectroscopy - High energy electron diffraction - Phase transitions - Surface structure - Thermal effects;

D O I：

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学科分类号：

摘要：

Adsorbate effect of the surface structure of 6H-SiC(0001) √×3√3- R30° surfaces has been studied by rocking curves of reflection high energy electron diffraction (RHEED) intensities and Auger electron spectroscopy (AES). Two types of √3×√3 surfaces, silicon rich and carbon rich surfaces, were observed in a series of an annealing process. In order to find what causes the phase transition from the silicon rich to the carbon rich phases, following gases are exposed on the silicon rich √3×√3 surface; H, O2 and a mixture gas of H 2 and O2. In the case of hydrogen-treated √3×√3 surface, the RHEED rocking curves and the Auger spectrum show good agreement with those of the carbon rich surface. It is concluded that the rearrangement of the √3×√3 surface in UHV is caused by adsorption of hydrogen on the silicon rich √×√3 surface. © 2002 Trans Tech Publications.

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