Characterization of thermopile based on complementary metal-oxide-semiconductor (CMOS) materials and post CMOS micromachining

被引：0

作者：

Du, Chen-Hsun ^{[1
]}

Lee, Chengkuo ^{[2
]}

机构：

[1] QIC Engineering Corp., 4F, No. 14, Lane 10, Alley 437, Taipei, Taiwan

[2] Institute of Precision Engineering, National Chung Hsing University, No. 250, Kuo Kuang Rd., Taichung 402, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2002年 / 41卷 / 6 B期

关键词：

Absorption - Composition - Etching - Heat conduction - Heat convection - Micromachining - Microsensors - Polysilicon - Scanning electron microscopy - Thermocouples - Thermopiles - Vacuum;

D O I：

10.1143/jjap.41.4340

中图分类号：

学科分类号：

摘要：

In this paper we present the characterization of a practical thermopile sensor, using extensive experimental results of measurement of heat conductance of thermopile produced by a complementary metal-oxide-semiconductor (CMOS) compatible process and front-side Si bulk etching. Several parameters, such as width of polysilicon, length of thermopile, number of thermocouples, overlap length of hot junction on absorber and area of absorption layer, are investigated. We also use a heater on the central membrane in order to heat the membrane. Both the power source from a blackbody IR source and the heater on the membrane are selected to heat the membrane. The device properties in vacuum and in the atmosphere were measured in order to distinguish the effect of heat conductance due to gas convection. In this study, the thermal characterization of the thermopile sensor is conducted. A model is established to predict the properties of device with some geometric and process-related factors are coupled.

引用

页码：4340 / 4345