Rapid turn-on characteristics in nonlinear photoconductive semiconductor switches

被引:0
|
作者
Zhang, Tongyi [1 ]
Shi, Shunxiang [1 ]
Gong, Renxi [1 ]
Sun, Yanling [1 ]
机构
[1] Sch. of Tech. Phys., Xidian Univ., Xi'an 710071, China
来源
Guangxue Xuebao/Acta Optica Sinica | 2002年 / 22卷 / 03期
关键词
Electric fields - Nonlinear systems - Numerical analysis - Semiconductor switches;
D O I
暂无
中图分类号
学科分类号
摘要
The rapid turn-on process of nonlinear photoconductive semiconductor switch is always associated with the formation of filamentary current. Some turn-on characteristics of nonlinear photoconductive semiconductor switches are analyzed based on the assumption that the mechanism of the turn-on in photoconductive semiconductor switches is the streamer discharge. The results, with carrier lifetime, optical absorption length, impact ionization coefficient, initial carrier concentration considered, fit with the experimental results well. This discussion corroborates the assumption and is helpful to the full understanding of the physical processes occurred in nonlinear PCSS. Some methods of improving and controlling the operational characteristics of PCSS are also given.
引用
收藏
页码:327 / 331
相关论文
共 50 条
  • [42] RECOVERY OF HIGH-FIELD GAAS PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES
    ZUTAVERN, FJ
    LOUBRIEL, GM
    OMALLEY, MW
    SCHANWALD, LP
    MCLAUGHLIN, DL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (04) : 696 - 700
  • [43] High power, longevity gallium arsenide photoconductive semiconductor switches
    YANG HongChun
    Science Bulletin, 2010, (13) : 1331 - 1337
  • [44] Concept of a measuring system for diagnostics of photoconductive semiconductor switches parameters
    Piwowarski, Karol
    Suproniuk, Marek
    Kaminski, Pawet
    Perka, Bogdan
    PRZEGLAD ELEKTROTECHNICZNY, 2019, 95 (11): : 117 - 119
  • [45] Application of Monte Carlo method to GaAs photoconductive semiconductor switches
    Shi, W
    Dai, HY
    Gu, ML
    Qu, GH
    Ma, DM
    OPTOELECTRONIC DEVICES AND INTEGRATION, PTS 1 AND 2, 2005, 5644 : 739 - 742
  • [46] High gain GaAs photoconductive semiconductor switches: Switch longevity
    Loubriel, GM
    Zutavern, FJ
    Mar, A
    Baca, AG
    Hjalmarson, HP
    O'Malley, MW
    Denison, GJ
    Helgeson, WD
    Brown, DJ
    Thornton, RL
    Donaldson, RM
    CONFERENCE RECORD OF THE 1998 TWENTY-THIRD INTERNATIONAL POWER MODULATOR SYMPOSIUM, 1998, : 101 - 104
  • [47] Super fast and high power SiC photoconductive semiconductor switches
    Yan Cheng-Feng
    Shi Er-Wei
    Chen Zhi-Zhan
    Li Xiang-Biao
    Xiao Bing
    JOURNAL OF INORGANIC MATERIALS, 2008, 23 (03) : 425 - 428
  • [48] Mechanism of current oscillations in gallium arsenide photoconductive semiconductor switches
    Tian Li-Qiang
    Shi Wei
    CHINESE PHYSICS LETTERS, 2008, 25 (07) : 2511 - 2513
  • [49] Developments and applications of photoconductive semiconductor switches in pulsed power technology
    Yuan, Jian-Qiang
    Xie, Wei-Ping
    Zhou, Liang-Ji
    Chen, Lin
    Wang, Xin-Xin
    Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, 2008, 20 (01): : 171 - 176
  • [50] High power, longevity gallium arsenide photoconductive semiconductor switches
    YANG HongChun CUI HaiJuan SUN YunQing ZENG Gang WU MingHe Institute of Applied Physics University of Electronic Science and Technology of China Chengdu China
    Chinese Science Bulletin, 2010, 55 (13) : 1331 - 1337