Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

被引：0
作者：
Zhang, Mingjun [1 ]
Huang, Jinyang [1 ]
Wang, Zihan [1 ]
Balasubramanian, Paramasivam [2 ,3 ]
Yan, Yan [2 ,3 ]
Zhou, Ye [4 ]
Han, Su-Ting [5 ]
Lu, Lei [6 ]
Zhang, Meng [2 ,3 ]
机构：
[1] Shenzhen Univ, Inst Microscale Optoelect, Shenzhen 518060, Peoples R China
[2] Shenzhen Univ, State Key Lab Radio Frequency Heterogeneous Integr, Shenzhen 518060, Peoples R China
[3] Shenzhen Univ, Coll Elect & Informat Engn, Shenzhen 518060, Peoples R China
[4] Shenzhen Univ, Inst Adv Study, Shenzhen 518060, Peoples R China
[5] Hong Kong Polytech Univ, Dept Appl Biol & Chem Technol, Hong Kong, Peoples R China
[6] Peking Univ, Sch Elect & Comp Engn, Shenzhen Grad Sch, Shenzhen 518055, Peoples R China
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2024年 / 12卷
基金：
中国国家自然科学基金;
关键词：
InZnO; thin-film transistors; magnetron sputtering; process optimization; CHANNEL LAYER THICKNESS; ELECTRICAL PERFORMANCE; ACTIVE-CHANNEL; STABILITY;
D O I：
10.1109/JEDS.2024.3466956
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The device performance of indium zinc oxide (IZO) thin-film transistors (TFTs) is optimized through process optimizations. By jointly adjusting the annealing condition, the channel thickness and the sputtering atmosphere, the roughness and oxygen vacancies (V(o)s) are precisely regulated. The optimized IZO TFTs can achieve the highest field effect mobility of similar to 71.8 cm(2)/Vs with a threshold voltage of similar to-0.6 V. Reliability of IZO TFTs under positive/negative bias stress is also examined. The interface quality and the Vo are two key factors influencing the device performance and reliability, confirmed by X-ray photoelectron spectroscopy and atomic force microscopy analysis.
引用
收藏
页码：868 / 874
页数：7
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