Investigation of strain relaxation mechanisms and transport properties in epitaxial SmNiO3 films

被引：20

作者：

Conchon, F. ^{[1
]}

Boulle, A. ^{[1
]}

Guinebretiere, R. ^{[1
]}

Dooryhee, E. ^{[2
]}

Hodeau, J. -L. ^{[2
]}

Girardot, C. ^{[3
,4
]}

Pignard, S. ^{[3
]}

Kreisel, J. ^{[3
]}

Weiss, F. ^{[3
]}

Libralesso, L. ^{[5
]}

Lee, T. L. ^{[5
]}

机构：

[1] ENSCI, CNRS, UMR 6638, Lab Sci Procedes Ceram & Traitements Surfaces, F-87065 Limoges, France

[2] CNRS, UPR 2940, Inst Neel, F-38042 Grenoble, France

[3] MINATEC, CNRS, UMR 5628, INP Grenoble,LMGP, F-38016 Grenoble, France

[4] Schneider Elect, F-38000 Grenoble, France

[5] European Synchrotron Radiat Facil, F-38043 Grenoble, France

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 12期

关键词：

D O I：

10.1063/1.2938845

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This article deals with strain relaxation in SmNiO3 epitaxial films deposited by chemical vapor deposition on SrTiO3 substrates. Thanks to x-ray reciprocal space mapping, we demonstrate that the strain relaxation is driven both "chemically" and "mechanically" by the formation of oxygen vacancies and misfit dislocations, respectively. Besides, a careful interpretation of the resistivity measurements allows us to highlight a correlation between the formation of oxygen vacancies, the stabilization of Ni3+, and the metal-insulator transition in the SmNiO3 films. Furthermore, using coplanar and grazing incidence diffraction, the shape of the strain gradient within the films is retrieved. This latter is calculated using a versatile scattering model involving B-spline functions. Finally, particular planar faults (Ruddlesden-Popper faults) that give rise to extended diffuse scattering on transverse scans are analyzed using a recent phenomenological model. (C) 2008 American Institute of Physics.

引用

页数：8