Response characteristic of blue light-emitting diodes

被引：0

作者：

Su, Chen ^{[1
]}

Chen, Guichu ^{[1
]}

Zheng, Shuwen ^{[1
]}

He, Longfei ^{[1
]}

Pi, Hui ^{[1
]}

Xu, Yiqin ^{[1
,2
]}

Tong, Jinhui ^{[1
]}

Fan, Ganghan ^{[1
]}

机构：

[1] Institute of Opto-Electronic Materials and Technology, South China Normal University

[2] Industral Technology Research Institute of Guangdong Province

来源：

Guangxue Xuebao/Acta Optica Sinica | 2013年 / 33卷 / 06期

关键词：

Active area; Light-emitting diode; Modulation bandwidth; Optoelectronics; Response characteristic;

D O I：

10.3788/AOS201333.0623002

中图分类号：

学科分类号：

摘要：

The impulse response characteristics and modulation bandwidth of blue light-emitting diode with a special-designed AlGaN staircase electron blocking layer are investiggated by using square wave pulse and sine wave modulation methods. And the energy band diagrams of the blue light-emitting diode (LED) with this special-designed staircase electron blocking layer have been numerically investigated using the APSYS simulation software. The simulation shows that ΔEc increases 43 meV and ΔEv decreases 36 meV. The results show that blue light-emitting diode with a special-designed AlGaN staircase electron blocking layer has better light output power and response performance. The superior performance can be attributed to higher carrier injection density of the active region, which improves the electron/hole radiative recombination rate.

引用

共 16 条

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