Perovskite single-phase growth of epitaxial Pb(Zn1/3Nb 2/3)O3 films by alternative-source-gas-introduced metalorganic chemical vapor deposition

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Department of Innovative and Engineered Materials, Tokyo Institute of Technology, J2-43, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8502, Japan ^{[1
]}

不详 ^{[2
]}

不详 ^{[3
]}

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| 1600年 / L1452-L1455卷 / November 25, 2005期

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摘要：

Epitaxial growth - Ferroelectric materials - Metallorganic chemical vapor deposition - Perovskite - Substrates - Thin films

引用

共 3 条

[1] Low temperature sintering and piezoelectric properties in Pb(Zr xTi1-x)O3-Pb(Zn1/3Nb 2/3)O3-Pb(Ni1/3Nb2/3)O3 ceramics
Ahn, Cheol-Woo
Song, Hyun-Cheol
Park, Seung-Ho
Nahm, Sahn
Uchino, Kenji
Priya, Shashank
Lee, Hyeung-Gyu
Kang, Nam-Kee
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 3 (1314-1321):
[2] Origin of giant electromechanical coupling factor of k31 mode and piezoelectric d31 constant in Pb[(Zn1/3Nb 2/3)0.09Ti0.09]O3 single crystal
Ogawa, Toshio
Numamoto, Yoshiki
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (11 B): : 7108 - 7112
[3] Optimum compositions for Pb(Zn1/3Nb2/3)O 3-PbTiO3 single crystal for high-performance applications
Rajan, Kalidindi K.
Zhang, Michelle J.
Lim, Leong-Chew
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 1 A (264-266):

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