A latch-up immunized lateral trench insulated gate bipolar transistor with a p+ diverter structure for smart power integrated circuit

被引：0
|
作者：
Kang, E.G. [1 ]
Moon, S.Y. [1 ]
Sung, M.Y. [1 ]
机构：
[1] Department of Electrical Engineering, Korea University, Seoul 136-701, Korea, Republic of
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 9 A期
关键词：
D O I：
10.1143/jjap.40.5267
中图分类号：
学科分类号：
摘要：
Insulated gate bipolar transistors
引用
收藏
页码：5267 / 5270
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