Extendibility of Ta2O5 metal-insulator-metal capacitor using Ru electrode

被引:0
|
作者
Tsuzumitani, Akihiko [1 ]
Okuno, Yasutoshi [1 ]
Shibata, Jun [1 ]
Shimizu, Tadami [1 ]
Yamamoto, Kazuhiko [1 ]
Mori, Yoshihiro [1 ]
机构
[1] ULSI Proc. Technol. Devmt. Center, Semiconductor Company, Matsushita Electronics Corporation, 19 Nishikujo-kasugacho, Minami-ku, Kyoto 601-8413, Japan
来源
| 2000年 / JJAP, Tokyo, Japan卷 / 39期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
23
引用
收藏
相关论文
共 50 条
  • [41] Nanotubular metal-insulator-metal capacitor arrays for energy storage
    Banerjee P.
    Perez I.
    Henn-Lecordier L.
    Lee S.B.
    Rubloff G.W.
    Nature Nanotechnology, 2009, 4 (5) : 292 - 296
  • [42] Dielectric Property and Breakdown Study of Metal-Insulator-Metal Capacitor
    Hota, M. K.
    Mahata, C.
    Mallik, S.
    Sarkar, C. K.
    Maiti, C. K.
    2009 4TH INTERNATIONAL CONFERENCE ON COMPUTERS AND DEVICES FOR COMMUNICATION (CODEC 2009), 2009, : 160 - +
  • [43] Nanotubular metal-insulator-metal capacitor arrays for energy storage
    Banerjee, Parag
    Perez, Israel
    Henn-Lecordier, Laurent
    Lee, Sang Bok
    Rubloff, Gary W.
    NATURE NANOTECHNOLOGY, 2009, 4 (05) : 292 - 296
  • [44] Spur-Less Interdigital Metal-Insulator-Metal Capacitor
    Xie, Na
    Tie, Huanyan
    Ma, Qiang
    Zhou, Bo
    PROGRESS IN ELECTROMAGNETICS RESEARCH LETTERS, 2021, 101 : 49 - 54
  • [45] Spur-Less Interdigital Metal-Insulator-Metal Capacitor
    Xie N.
    Tie H.
    Ma Q.
    Zhou B.
    Progress in Electromagnetics Research Letters, 2021, 101 : 49 - 54
  • [46] Characterization of metal. insulator metal electrical properties of electron cyclotron resonance plasma deposited Ta2O5
    Ono, Toshiro
    Kato, Koji
    Toyota, Hiroshi
    Fukuda, Yukio
    Jin, Yoshito
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (9B): : 7345 - 7350
  • [47] Electrical characterization of CVD TiN upper electrode for Ta2O5 capacitor
    Lee, MB
    Lee, HD
    Park, BL
    Chung, UI
    Koh, YB
    Lee, MY
    IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 683 - 686
  • [48] Improvement in the leakage current characteristic of metal-insulator-metal capacitor by adopting RuO2 film as bottom electrode
    Han, Jeong Hwan
    Han, Sora
    Lee, Woongkyu
    Lee, Sang Woon
    Kim, Seong Keun
    Gatineau, Julien
    Dussarrat, Christian
    Hwang, Cheol Seong
    APPLIED PHYSICS LETTERS, 2011, 99 (02)
  • [49] Tetragonal Zirconia Stabilization by Metal Addition for Metal-Insulator-Metal Capacitor Applications
    Ferrand, J.
    Beugin, V.
    Crisci, A.
    Coindeau, S.
    Jeannot, S.
    Gros-Jean, M.
    Blanquet, E.
    ATOMIC LAYER DEPOSITION APPLICATIONS 9, 2013, 58 (10): : 223 - 233
  • [50] Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriers
    Kim, SJ
    Cho, BJ
    Bin Yu, M
    Li, MF
    Xiong, YZ
    Zhu, CX
    Chin, A
    Kwong, DL
    IEEE ELECTRON DEVICE LETTERS, 2005, 26 (09) : 625 - 627