Investigation of crystallization behavior of sputter-deposited nitrogen-doped amorphous Ge2Sb2Te5 thin films

被引：0

作者：

Seo, Hun ^{[1
]}

Jeong, Tae-Hee ^{[1
]}

Park, Jeong-Woo ^{[1
]}

Yeon, Cheong ^{[1
]}

Kim, Sang-Jun ^{[2
]}

Kim, Sang-Youl ^{[2
]}

机构：

[1] Devices and Materials Laboratory, LG Corporate Institute of Technology, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-724, Korea, Republic of

[2] Dept. of Molec. Sci. and Technology, Ajou University, Suwon 442-749, Korea, Republic of

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 2 B期

关键词：

Amorphous films - Crystallization - Doping (additives) - Germanium compounds - Grain growth - Grain size and shape - Nitrogen - Nucleation - Optical films - Optical multilayers - Sputter deposition - Thin films;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The crystallization behavior of nitrogen-doped amorphous Ge2Sb2Te5-(N) phase-change thin films was studied by utilizing differential scanning calorimetry, in situ ellipsometry and in situ transmission electron microscopy. The combined analysis of in situ ellipsometry isotherms of amorphous Ge2Sb2Te5-(N) films and the Johnson-Mehl-Avrami equation revealed that the crystallization process of amorphous Ge2Sb2Te5-(N) films changes depending on the nitrogen content. The crystallization behavior of Ge2Sb2Te5 film revealed a two-step process that includes spherical-nucleation and disc-shaped grain growth. In contrast, nitrogen-doping into Ge2Sb2Te5 thin films suppresses the second step and the crystallization of Ge2Sb2Te5-(N) becomes a one-step process that is the primary nucleation process. The number of nucleation sites during the crystallization of amorphous Ge2Sb2Te5-(N) films, increased markedly with the annealing temperature in the spherically shaped nuclei and eventually saturated. The effective crystallinity of Ge2Sb2Te5-(N) alloy films decreased with the increase in nitrogen content, mainly due to the grain-size refinement.

引用

页码：745 / 751