Competitive nature of weak anti-localization and weak localization effect in Cr-doped sputtered topological insulator Bi2Se3 thin film

被引：1

作者：

Gautam, Sudhanshu ^{[1
,2
]}

Maurya, V. K. ^{[1
]}

Aggarwal, Vishnu ^{[1
,2
]}

Kumar, Rahul ^{[1
,2
]}

Singh, Bheem ^{[1
,2
]}

Awana, V. P. S. ^{[1
,2
]}

Yadav, B. S. ^{[3
]}

Ojha, S. ^{[4
]}

Ganesan, R. ^{[5
]}

Kushvaha, S. S. ^{[1
,2
]}

机构：

[1] Natl Phys Lab, CSIR, Dr KS Krishnan Marg, New Delhi 110012, India

[2] Acad Sci & Innovat Res AcSIR, Ghaziabad 201002, India

[3] Solid State Phys Lab, Lucknow Rd, Delhi 110054, India

[4] Inter Univ Accelerator Ctr, Aruna Asaf Ali Marg, New Delhi 110067, India

[5] Birla Inst Technol & Sci BITS, Dept Chem, Hyderabad Campus, Hyderabad 500078, Telangana, India

来源：

JOURNAL OF APPLIED PHYSICS | 2024年 / 135卷 / 19期

关键词：

ELECTRON-ELECTRON INTERACTION; TRANSPORT-PROPERTIES; SURFACE; BI2TE3; MAGNETORESISTANCE; ANTILOCALIZATION; GROWTH; STATES;

D O I：

10.1063/5.0206345

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the present study, we have investigated the effect of magnetic Cr doping on the transport properties of a sputtered Bi2Se3 thin film on the SrTiO3 (110) substrate. The high-resolution x-ray diffraction and Raman spectroscopy measurements revealed the growth of rhombohedral Bi2Se3 thin films. Further electronic and compositional analysis was done by x-ray photoemission spectroscopy and Rutherford backscattering spectroscopy, and the x-value was estimated to be 0.18 in the Bi2-xCrxSe3 thin film. The variation in the resistivity with temperature (2-300 K) revealed the metallic nature in undoped Bi2Se3 up to 30 K and upturn resistivity below 30 K. The Cr-doped Bi2Se3 resistivity data show a traditional semiconducting nature up to 25 K and take an abrupt upturn resistivity below 25 K. The resistivity behavior of both samples was explained by adopting a model that consists of the total resistance, a combination of bulk and surface resistance in parallel. The bulk bandgap value determined by this method is obtained to be 256 meV in an undoped Bi2Se3 thin film. Magnetoconductance data of the undoped thin film revealed a weak anti-localization (WAL) effect, while the Cr-doped thin film showed a weak localization (WL) effect at low temperatures (<50 K). At low magnetic field and low temperature, a competing nature of WAL and WL effects was prominent in the Cr-doped film. A drastic increase in the electrical resistance suggests that Cr doping can significantly modify the electrical properties of Bi2Se3 thin films, which could have potential applications in futuristic devices.

引用

页数：11