A Technical Foundation for RF CMOS Power Amplifiers: Part 3: Power Amplifier 3-Port Characteristics

被引：2
|
作者：
McCune E. [1 ]
机构：
[1] University of California, Berkeley
来源：
McCune, Earl (emc2@wirelessandhighspeed.com) | 1600年 / Institute of Electrical and Electronics Engineers Inc., United States卷 / 08期
关键词：
Integrated circuit modeling; Power amplifiers; Power generation; Radio frequency; Resistance; Transfer functions; Transistors;
D O I：
10.1109/MSSC.2015.2495664
中图分类号：
学科分类号：
摘要：
Here in the third article of this series [1] (see ?A Series on CMOS Transmitter Techniques?), implications from the fact that all amplifiers are now, and have always been, three-port circuits are explored. © 2016 IEEE.
引用
收藏
页码：44 / 50
页数：6
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