A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

被引：0
|
作者：
20143518118571
机构：
[1] Mikhelashvili, V.
[2] Cristea, D.
[3] Meyler, B.
[4] Yofis, S.
[5] Shneider, Y.
[6] Atiya, G.
[7] Cohen-Hyams, T.
[8] Kauffmann, Y.
[9] Kaplan, W.D.
[10] Eisenstein, G.
来源：
| 1600年 / American Institute of Physics Inc.卷 / 116期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
相关论文
共 50 条
  • [1] A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate
    Mikhelashvili, V.
    Cristea, D.
    Meyler, B.
    Yofis, S.
    Shneider, Y.
    Atiya, G.
    Cohen-Hyams, T.
    Kauffmann, Y.
    Kaplan, W. D.
    Eisenstein, G.
    JOURNAL OF APPLIED PHYSICS, 2014, 116 (07)
  • [2] Evaluation and resolution for nonideal characteristics of complementary metal-oxide-semiconductor devices fabricated on silicon-on-insulator
    Cho, Seongjae
    Park, Il Han
    Lee, Jung Hoon
    Lee, Jong Duk
    Park, Byung-Gook
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (06) : 4408 - 4412
  • [3] RANDOM TELEGRAPH SIGNALS IN SILICON-ON-INSULATOR METAL-OXIDE-SEMICONDUCTOR TRANSISTORS
    SIMOEN, E
    CLAEYS, C
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (07) : 3647 - 3653
  • [4] Ambipolar Schottky barrier silicon-on-insulator metal-oxide-semiconductor transistors
    Lin, HC
    Wang, MF
    Lu, CY
    Huang, TY
    SOLID-STATE ELECTRONICS, 2003, 47 (02) : 247 - 251
  • [5] Random telegraph signals in silicon-on-insulator metal-oxide-semiconductor transistors
    1600, American Inst of Physics, Woodbury, NY, USA (75):
  • [6] Self-Aligned Asymmetric Metal-Oxide-Semiconductor Field Effect Transistors Fabricated on Silicon-on-Insulator
    Kim, Jong Pil
    Song, Jae Young
    Kim, Sang Wan
    Park, Jae Hyun
    Choi, Woo Young
    Lee, Jong Duk
    Shin, Hyungcheol
    Park, Byung-Gook
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (09) : 0912011 - 0912015
  • [7] Enhanced electroluminescence in silicon-on-insulator metal-oxide-semiconductor transistors with thin silicon layer
    Karsenty, A
    Sa'ar, A
    Ben-Yosef, N
    Shappir, J
    APPLIED PHYSICS LETTERS, 2003, 82 (26) : 4830 - 4832
  • [8] SiGe-on-insulator substrate fabricated by melt solidification for a strained-silicon complementary metal-oxide-semiconductor
    Sugii, N
    Yamaguchi, S
    Washio, K
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (05): : 1891 - 1896
  • [9] Integrated active magnetic probe in silicon-on-insulator complementary, metal-oxide-semiconductor technology
    Aoyama, Satoshi
    Kawahito, Shoji
    Yamaguchi, Masahiro
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (9A): : 6878 - 6883
  • [10] Integrated active magnetic probe in silicon-on-insulator complementary metal-oxide-semiconductor technology
    Aoyama, Satoshi
    Kawahito, Shoji
    Yamaguchi, Masahiro
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (9 A): : 6878 - 6883
12345