Single electron tunneling of nanoscale TiSi2 islands on Si

被引：0

作者：

Oh, Jaehwan ^{[1
]}

Meunier, Vincent ^{[1
]}

Ham, Hoon ^{[1
]}

Nemanich, R.J. ^{[1
]}

机构：

[1] Department of Physics, North Carolina State University, Raleigh, NC 27695-8202, United States

来源：

| 1600年 / American Institute of Physics Inc.卷 / 92期

关键词：

Scanning tunneling microscopy - Schottky barrier diodes - Semiconductor doping - Electron tunneling - Interfaces (materials) - Silicon compounds - Semiconductor junctions - Metal substrates - Nanotechnology - Electrons - Titanium compounds;

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