Passivation of deep levels in 3C-SiC on Si by a hydrogen plasma treatment

被引：0

作者：

Kato, Masashi ^{[1
]}

Sobue, Fumitaka ^{[1
]}

Ichimura, Masaya ^{[1
]}

Arai, Eisuke ^{[1
]}

Yamada, Noboru ^{[2
]}

Tokuda, Yutaka ^{[3
]}

Okumura, Tsugunori ^{[4
]}

机构：

[1] Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan

[2] Power Device Laboratory, Electronic Device Division, Toyota Central Research and Development Laboratories Inc., Nagakute, Aichi 480-1192, Japan

[3] Depertment of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan

[4] Department of Electrical Engineering, Tokyo Metropolitan University, Hachiohji, Tokyo 192-0397, Japan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 4 B期

关键词：

Plasma induced deep-levels;

D O I：

10.1143/jjap.40.2983

中图分类号：

学科分类号：

摘要：

引用

页码：2983 / 2986

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