Passivation of deep levels in 3C-SiC on Si by a hydrogen plasma treatment

被引：0
|
作者：
Kato, Masashi [1 ]
Sobue, Fumitaka [1 ]
Ichimura, Masaya [1 ]
Arai, Eisuke [1 ]
Yamada, Noboru [2 ]
Tokuda, Yutaka [3 ]
Okumura, Tsugunori [4 ]
机构：
[1] Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan
[2] Power Device Laboratory, Electronic Device Division, Toyota Central Research and Development Laboratories Inc., Nagakute, Aichi 480-1192, Japan
[3] Depertment of Electronics, Aichi Institute of Technology, Yakusa, Toyota 470-0392, Japan
[4] Department of Electrical Engineering, Tokyo Metropolitan University, Hachiohji, Tokyo 192-0397, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2001年 / 40卷 / 4 B期
关键词：
Plasma induced deep-levels;
D O I：
10.1143/jjap.40.2983
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2983 / 2986
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