This paper presents the substrate temperature dependence of opto-electrical properties for transparent conducting Al-doped ZnO films prepared on polyisocyanate (PI) substrates by r.f. sputtering. Polycrystalline ZnO:Al films with good adherence to the substrates having a (002) preferred orientation have been obtained with the resistivity in the range from 4.1×10-3 to 5.3×10-4Ω·cm. The carrier density is more than 2.6×1020cm-3 and the Hall mobility is in the range between 5.78 and 13.11 cm2/V/s for films. The average transmittance reaches 75% in the visible spectrum. The quality of obtained films depends on the substrate temperature during film fabrication.