Effect of Oxygen Annealing Temperature on Properties of Ga2O3 Thin Films Grown at Room Temperature by Pulsed Laser Deposition

被引：0
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作者：
Wang, Chen [1 ]
Zhang, Yuchao [1 ]
Fan, Weihang [1 ]
Li, Shiwei [1 ]
Zhang, Xiaoying [1 ]
Lin, Haijun [1 ]
Lien, Shuiyang [1 ,2 ]
Zhu, Wenzhang [1 ]
机构：
[1] Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opto-Electronic and Communication Engineering, Xiamen University of Technology, Xiamen,361024, China
[2] Department of Materials Science and Engineering, Da-Yeh University, Changhua,51591, Taiwan
来源：
Guangxue Xuebao/Acta Optica Sinica | 2022年 / 42卷 / 08期
关键词：
Annealing - Atmospheric temperature - Energy gap - Film preparation - Gallium compounds - Optoelectronic devices - Oxide films - Oxygen - Pulsed laser deposition - Pulsed lasers - Sapphire - Substrates - Thermal expansion;
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