Influence of doping density on hot-carrier-effect in grooved gate PMOSFET

Based on the hydro-dynamics energy transport model, the influence of channel and substrate doping densities on hot-carrier-effect immunity in deep-sub-micron grooved gate PMOSFET is studied and explained in terms of device interior physics mechanism. The research results indicate that with the increase of doping density in channel, the hot-carrier-effect immunity becomes better. While as doping density in substrate rises, the hot-carrier-effect immunity becomes worse. Those mean that because the electric field distribution and corner effect in device are influenced by the structure parameters and so is the transportation of carriers as well as the hot-carrier-effect.