Comparison of the growth characteristics of SiC on Si between low-pressure CVD and triode plasma CVD

被引：0

作者：

Yasui, Kanji ^{[1
]}

Hashiba, Masahiro ^{[1
]}

Narita, Yuzuru ^{[1
]}

Akahane, Tadashi ^{[1
]}

机构：

[1] Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka, Nagaoka, Niigata 940-2188, Japan

来源：

Materials Science Forum | 2002年 / 389-393卷 / 01期

关键词：

Activation energy - Epitaxial growth - Low pressure chemical vapor deposition - Plasma enhanced chemical vapor deposition - Thin films - Triodes;

D O I：

10.4028/www.scientific.net/msf.389-393.367

中图分类号：

学科分类号：

摘要：

In order to investigate the effect of the supply of hydrogen radicals during the SiC growth, SiC films were grown on Si substrates by low-pressure thermal CVD (LPCVD) and triode plasma CVD using dimethylsilane (DMS). Activation energy for the epitaxial growth rate of SiC by LPCVD was estimated to be 73±5kcal/mol, whereas that by triode plasma CVD was about 48±2 kcal/mol. As in the case of the growth rate of SiC using monomethylsilane (MMS), the activation energy by using the triode plasma CVD was reduced about 25kcal/mol in the case of DMS. © 2002 Trans Tech Publications.

引用

页码：367 / 370