Design and Characteristics of Polysilicon Emitter Bipolar Junction Transistors

被引：0
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作者：
Shih, Neng-Fu [1 ]
机构：
[1] Department of Electrical Engineering, Hsiuping Institute of Technology, No. 11, Gungye Rd., Dali City, Taichung 412, Taiwan
来源：
| 2003年 / Japan Society of Applied Physics卷 / 42期
关键词：
D O I：
10.1143/jjap.42.l1238
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学科分类号：
摘要：
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