Design and Characteristics of Polysilicon Emitter Bipolar Junction Transistors

被引：0

作者：

Shih, Neng-Fu ^{[1
]}

机构：

[1] Department of Electrical Engineering, Hsiuping Institute of Technology, No. 11, Gungye Rd., Dali City, Taichung 412, Taiwan

来源：

| 2003年 / Japan Society of Applied Physics卷 / 42期

关键词：

D O I：

10.1143/jjap.42.l1238

中图分类号：

学科分类号：

摘要：

引用

共 50 条

[21] SERIES RESISTANCE CALCULATIONS FOR POLYSILICON TUNNEL JUNCTION EMITTER TRANSISTORS
TSOU, BPC
CHU, KM
PULFREY, DL
CANADIAN JOURNAL OF PHYSICS, 1989, 67 (04) : 218 - 220
[22] THE BENEFITS OF FLUORINE IN PNP POLYSILICON EMITTER BIPOLAR-TRANSISTORS
MOISEIWITSCH, NE
ASHBURN, P
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (07) : 1249 - 1256
[23] THE ROLE OF THE INTERFACIAL LAYER IN POLYSILICON EMITTER BIPOLAR-TRANSISTORS
ELTOUKHY, AA
ROULSTON, DJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (12) : 1862 - 1869
[24] On the origin of 1/f noise in polysilicon emitter bipolar transistors
Deen, MJ
Rumyantsev, SL
Schroter, M
JOURNAL OF APPLIED PHYSICS, 1999, 85 (02) : 1192 - 1195
[25] A COMPACT CHARGE RATIO EXPRESSION FOR THE EMITTER DELAY OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS
CASTANER, LM
SUREDA, S
BARDES, D
ALCUBILLA, R
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (03) : 454 - 455
[26] Modelling of bonding pads and their effect on the high-frequency-noise figure of polysilicon emitter bipolar junction transistors
Deen, MJ
Ilowski, J
CANADIAN JOURNAL OF PHYSICS, 1996, 74 : S200 - S204
[27] High-energy particle irradiation effects in 0.5 μm BiCMOS polysilicon emitter bipolar junction transistors
Simoen, E
Decoutere, S
Merron, B
Deferm, L
Claeys, C
Berger, G
Ryckewaert, G
Ohyama, H
Sunaga, H
RADECS 97: FOURTH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS, 1998, : 102 - 107
[28] IDENTIFICATION OF PERIMETER DEPLETION AND EMITTER PLUG EFFECTS IN DEEP-SUBMICROMETER, SHALLOW-JUNCTION POLYSILICON EMITTER BIPOLAR-TRANSISTORS
BURGHARTZ, JN
SUN, JYC
STANIS, CL
MADER, SR
WARNOCK, JD
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (06) : 1477 - 1489
[29] COMPARISON OF EXPERIMENTAL AND THEORETICAL RESULTS ON POLYSILICON EMITTER BIPOLAR-TRANSISTORS
ASHBURN, P
SOEROWIRDJO, B
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) : 853 - 860
[30] Crowding effects and low frequency noise in polysilicon emitter bipolar transistors
Routoure, JM
Lepaisant, J
Bloyet, D
Bardy, S
Lebailly, J
SOLID-STATE ELECTRONICS, 1999, 43 (05) : 931 - 936

← 1 2 3 4 5 →