The design and fabrication of a GaN-based monolithic light-emitting diode array

被引：0
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作者：
机构：
[1] Semiconductor Lighting RandD Center, Chinese Academy of Sciences, Institute of Semiconductors
来源：
Zhan, T. (zhanteng10@semi.ac.cn) | 1600年 / Institute of Physics Publishing, Temple Circus, Temple Way, Bristol, BS1 6BE, United Kingdom卷 / 34期
关键词：
array; GaN; high voltage; LED; monolithic;
D O I：
10.1088/1674-4926/34/9/094010
中图分类号：
学科分类号：
摘要：
We report a new monolithic structure of GaN-based light-emitting diode (LED) which can be operated under high voltage or alternative current. Differing from the conventional single LED chip, the monolithic light-emitting diode (MLED) array contains microchips which are interconnected in series or parallel. The key chip fabrication processing methods of the monolithic LED array include deep dry etching, sidewall insulated protection, and electrode interconnection. A 12 V GaN-based blue high voltage light emitting diode was designed and fabricated in our experiment. The forward current - voltage characteristics of MLEDs were consistent with those of conventional single junction light emitting diodes. © 2013 Chinese Institute of Electronics.
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