Effective dopant activation in silicon film using excimer laser annealing for high-performance thin film transistors

被引：0
|
作者：
Noguchi, Takashi [1 ]
机构：
[1] Electrical and Electronics Engineering, University of the Ryukyus, Nishihara, Okinawa 903-0213, Japan
来源：
Japanese Journal of Applied Physics | 2008年 / 47卷 / 3 PART 2期
关键词：
17;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Journal article (JA)
引用
收藏
页码：1858 / 1861
相关论文
共 50 条
  • [41] High-performance poly-Si thin film transistors crystallized by excimer laser irradiation with a-Si spacer structure
    Chang, TK
    Lin, CW
    Tsai, CC
    Lu, JH
    Chen, BT
    Cheng, HC
    ELECTROCHEMICAL AND SOLID STATE LETTERS, 2005, 8 (01) : G14 - G16
  • [42] Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing
    Tseng, CH
    Lin, CW
    Teng, TH
    Chang, TK
    Cheng, HC
    Chin, A
    SOLID-STATE ELECTRONICS, 2002, 46 (08) : 1085 - 1090
  • [43] Excimer laser crystallization and doping of source and drain regions in high quality amorphous silicon thin film transistors
    AlNuaimy, EA
    Marshall, JM
    APPLIED PHYSICS LETTERS, 1996, 69 (25) : 3857 - 3859
  • [44] Impact of AC Stress in Low Temperature Polycrystalline Silicon Thin Film Transistors Produced With Different Excimer Laser Annealing Energies
    Zheng, Yu-Zhe
    Wu, Chia-Chuan
    Chen, Po-Hsun
    Chang, Ting-Chang
    Zhou, Kuan-Ju
    Tu, Hong-Yi
    Tu, Yu-Fa
    Chen, Yu-An
    Shih, Yu-Shan
    Wang, Yu-Xuan
    Sun, Pei-Jun
    Hung, Yang-Hao
    Tsai, Tsung-Ming
    IEEE ELECTRON DEVICE LETTERS, 2021, 42 (06) : 847 - 850
  • [45] High-performance thin-film transistors using semiconductor nanowires and nanoribbons
    Duan, XF
    Niu, CM
    Sahi, V
    Chen, J
    Parce, JW
    Empedocles, S
    Goldman, JL
    NATURE, 2003, 425 (6955) : 274 - 278
  • [46] High-performance thin-film transistors using semiconductor nanowires and nanoribbons
    Xiangfeng Duan
    Chunming Niu
    Vijendra Sahi
    Jian Chen
    J. Wallace Parce
    Stephen Empedocles
    Jay L. Goldman
    Nature, 2003, 425 : 274 - 278
  • [47] Low-temperature dopant activation and its application to polycrystalline silicon thin film transistors
    Lee, SW
    Ihn, TH
    Joo, SK
    APPLIED PHYSICS LETTERS, 1996, 69 (03) : 380 - 382
  • [48] High-performance top and bottom double-gate low-temperature poly-silicon thin film transistors fabricated by excimer laser crystallization
    Tsai, Chun-Chien
    Lee, Yao-Jen
    Wang, Jyh-Liang
    Wei, Kai-Fang
    Lee, I-Che
    Chen, Chih-Chung
    Cheng, Huang-Chung
    SOLID-STATE ELECTRONICS, 2008, 52 (03) : 365 - 371
  • [49] HIGH-PERFORMANCE THIN-FILM SILICON-ON-INSULATOR CMOS TRANSISTORS IN POROUS ANODIZED SILICON
    THOMAS, NJ
    DAVIS, JR
    KEEN, JM
    CASTLEDINE, JG
    BRUMHEAD, D
    GOULDING, M
    ALDERMAN, J
    FARR, JPG
    EARWAKER, LG
    LECUYER, J
    STIRLAND, IM
    COLE, JM
    IEEE ELECTRON DEVICE LETTERS, 1989, 10 (03) : 129 - 131
  • [50] Self-patterning of high-performance thin film transistors
    Chang, Kuo-Jui
    Yang, Feng-Yu
    Liu, Cheng-Chin
    Hsu, Meei-Yu
    Liao, Ta-Chuan
    Cheng, Huang-Chung
    ORGANIC ELECTRONICS, 2009, 10 (05) : 815 - 821
12345