Micro-analysis of N+ ion-implanted TiNi shape memory alloy

被引：0

作者：

Feng, Xiangdong

Wang, Zhiguo

Zu, Xiaotao

Dai, Jinyi

机构：

[1] Sichuan University, Chengdu 610064, China

[2] University of Electronic Science and Technology of China, Chengdu 610054, China

[3] Inst of Electronic Engineering Research, CAEP, Mianyang 621907, China

[4] Department of Physics, Sichuan University, Chengdu 610064, China

来源：

Xiyou Jinshu Cailiao Yu Gongcheng/Rare Metal Materials and Engineering | 2003年 / 32卷 / 04期

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摘要：

The TiNi shape memory alloy samples were implanted by 75 keV N+ with doses of 3 × 1017N+cm-2 and 8 × 1017N+cm-2(dose rate 16.3 μA/cm 2) at 200° during the ion implantation. The samples were analyzed by X-ray diffraction(XRD) and X-ray photoelectron spectroscopy(XPS). The results showed that the TiN was formed after the N+ ion implantation. Some TiO2 also formed in the surface of samples, due to the lower vacuum probably. Because the sputtering coefficient of Ni was bigger than that of Ti, so the Ni signal did not show in the XPS pattern between 0 and 1 000 eV.

引用

页码：309 / 312