Double injection in graphene p-i-n structures

被引：0

作者：

Research Institute for Electrical Communication, Tohoku University, Sendai 980-8577, Japan ^{[1
]}

不详 ^{[2
]}

不详 ^{[3
]}

机构：

[1] Ryzhii, V.

[2] Semenikhin, I.

[3] Ryzhii, M.

[4] Svintsov, D.

[5] Vyurkov, V.

[6] Satou, A.

[7] Otsuji, T.

来源：

| 1600年 / American Institute of Physics Inc.卷 / 113期

关键词：

We study the processes of the electron and hole injection (double injection) into the i-region of graphene-layer and multiple graphene-layer p-i-n structures at the forward bias voltages. The hydrodynamic equations governing the electron and hole transport in graphene coupled with the two-dimensional Poisson equation are employed. Using analytical and numerical solutions of the equations of the model; we calculate the band edge profile; the spatial distributions of the quasi-Fermi energies; carrier density and velocity; and the current-voltage characteristics. In particular; we demonstrated that the electron and hole collisions can strongly affect these distributions. The obtained results can be used for the realization and optimization of graphene-based injection terahertz and infrared lasers. © 2013 AIP Publishing LLC;

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摘要：

Journal article (JA)

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