Various effective resist diffusion lengths methodology for OPC model calibration

被引：0
|
作者：
Shanghai Institute of Microsystem and Information Technology,, Chinese Academy of Sciences, Shanghai 200050, China [1 ]
不详 [2 ]
不详 [3 ]
不详 [4 ]
机构：
来源：
Pan Tao Ti Hsueh Pao | 2008年 / 12卷 / 2346-2352期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：2346 / 2352
相关论文
共 50 条
  • [41] Two dimensional image-based model calibration for OPC applications
    Taravade, KN
    Croffie, E
    Jost, A
    OPTICAL MICROLITHOGRAPHY XVII, PTS 1-3, 2004, 5377 : 1522 - 1527
  • [42] Feedback flow to improve model based OPC calibration test pattern
    Tawfic, Walid A.
    Al-Imam, Mohamed
    Madkour, Karim
    Fathy, Rami
    Kusnadi, Ir
    Bailey, George E.
    DESIGN FOR MANUFACTURABILITY THROUGH DESIGN-PROCESS INTEGRATION, 2007, 6521
  • [43] Improving the model robustness for OPC by extracting relevant test patterns for calibration
    Jeong, Moon-Gyu
    Lee, Sang-Ho
    Jung, Jee-Eun
    Hyon, Chankyeong
    Choi, Iljung
    Kang, Young-Seog
    Park, Youngkyou
    OPTICAL MICROLITHOGRAPHY XX, PTS 1-3, 2007, 6520
  • [44] Estimation of diffusion lengths of acid and quencher in chemically amplified resist on the basis of extreme ultraviolet exposure results
    Tanaka, Yuusuke
    Kikuchi, Yukiko
    Goo, DooHoon
    Oizumi, Hiroaki
    Nishiyama, Iwao
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2007, 25 (06): : 2114 - 2117
  • [45] A Study on the Effective Calibration Methodology Using two Vision Sensors
    Kho, Younghoon
    Hong, Jungwan
    Kwon, Yongjin
    2012 INTERNATIONAL CONFERENCE ON FUTURE INFORMATION TECHNOLOGY AND MANAGEMENT SCIENCE & ENGINEERING (FITMSE 2012), 2012, 14 : 183 - 188
  • [46] A model-based methodology for reducing OPC outpui pattern complexity
    Melvin, LS
    Rieger, ML
    23RD ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2, 2003, 5256 : 238 - 245
  • [47] Improving OPC Model Accuracy of Dry Resist for Low k1 EUV Patterning
    Xu, Dongbo
    Gillijns, Werner
    Wu, Stewart
    Jambaldinni, Shruti
    Kam, Benjamin
    De Silva, Anuja
    Fenger, Germain
    DTCO AND COMPUTATIONAL PATTERNING III, 2024, 12954
  • [48] OPC Model calibration for CPL patterning at extreme low K1
    Shi, XL
    Laidig, T
    Chen, JF
    Van Den Broeke, D
    Hsu, S
    Hsu, M
    Wampler, K
    Hollerbach, U
    Park, JC
    Linda, Y
    24TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PT 1 AND 2, 2004, 5567 : 614 - 625
  • [49] A Non-uniform SEM Contour Sampling Technique for OPC Model Calibration
    Shibahara, T.
    Oikawa, M.
    Shindo, H.
    Sugahara, H.
    Hojyo, Y.
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXVI, PTS 1 AND 2, 2012, 8324
  • [50] A CD-Gap-Free Contour Extraction Technique for OPC Model Calibration
    Shibahara, T.
    Minakawa, T.
    Oikawa, M.
    Shindo, H.
    Sugahara, H.
    Hojyo, Y.
    METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXV, PT 1 AND PT 2, 2011, 7971
12345