Dielectric confinement property of silicon quantum dots

被引：0

作者：

Guo, Z. ^{[1
]}

Wang, J. ^{[1
]}

Guo, H. ^{[1
]}

Zhang, W. ^{[1
]}

机构：

[1] College of Info. Sci. and Eng., Huaqiao Univ., 362011, Quanzhou, China

来源：

Huaqiao Daxue Xuebao/Journal of Huaqiao University | 2001年 / 22卷 / 02期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Under the condition of effective mass approximation, the authors studied the relation between dielectric constant of loosely bounded quantum dots and their radii; and calculated the dielectric constant of silicon quantum dots by way of photoluminescent spectra of silicon quantum dots determined at room temperature; and confirmed the dimensional effect of the dielectric constant of silicon quantum dots.

引用

页码：143 / 146

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