Dielectric confinement property of silicon quantum dots

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作者
Guo, Z. [1 ]
Wang, J. [1 ]
Guo, H. [1 ]
Zhang, W. [1 ]
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[1] College of Info. Sci. and Eng., Huaqiao Univ., 362011, Quanzhou, China
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摘要
Under the condition of effective mass approximation, the authors studied the relation between dielectric constant of loosely bounded quantum dots and their radii; and calculated the dielectric constant of silicon quantum dots by way of photoluminescent spectra of silicon quantum dots determined at room temperature; and confirmed the dimensional effect of the dielectric constant of silicon quantum dots.
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页码:143 / 146
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