Dielectric confinement property of silicon quantum dots

被引：0

作者：

Guo, Z. ^{[1
]}

Wang, J. ^{[1
]}

Guo, H. ^{[1
]}

Zhang, W. ^{[1
]}

机构：

[1] College of Info. Sci. and Eng., Huaqiao Univ., 362011, Quanzhou, China

来源：

Huaqiao Daxue Xuebao/Journal of Huaqiao University | 2001年 / 22卷 / 02期

关键词：

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Under the condition of effective mass approximation, the authors studied the relation between dielectric constant of loosely bounded quantum dots and their radii; and calculated the dielectric constant of silicon quantum dots by way of photoluminescent spectra of silicon quantum dots determined at room temperature; and confirmed the dimensional effect of the dielectric constant of silicon quantum dots.

引用

页码：143 / 146

共 50 条

[1] Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride
Park, NM
Choi, CJ
Seong, TY
Park, SJ
PHYSICAL REVIEW LETTERS, 2001, 86 (07) : 1355 - 1357
[2] Si quantum dots in silicon nitride: Quantum confinement and defects
Goncharova, L. V.
Nguyen, P. H.
Karner, V. L.
D'Ortenzio, R.
Chaudhary, S.
Mokry, C. R.
Simpson, P. J.
JOURNAL OF APPLIED PHYSICS, 2015, 118 (22)
[3] Silicon Clathrate Quantum Dots and the Allotropic Dependence of Quantum Confinement
Brawand, Nicholas P.
Lusk, Mark T.
JOURNAL OF PHYSICAL CHEMISTRY C, 2014, 118 (46): : 27091 - 27096
[4] Si quantum dots in silicon nitride: Quantum confinement and defects
20155101703295
Goncharova, L.V. (lgonchar@uwo.ca), 1600, American Institute of Physics Inc. (118):
[5] The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots
Askari, Sadegh
Svrcek, Vladmir
Maguire, Paul
Mariotti, Davide
ADVANCED MATERIALS, 2015, 27 (48) : 8011 - 8016
[6] Excitons in ZnO Quantum Dots: The Role of Dielectric Confinement
Garoufalis, Christos S.
Zeng, Zaiping
Bester, Gabriel
Galanakis, Iosif
Hayrapetyan, David
Paspalakis, Emmanuel
Baskoutas, Sotirios
JOURNAL OF PHYSICAL CHEMISTRY C, 2022, 126 (05): : 2833 - 2838
[7] Dielectric function of quantum dots in the strong confinement regime
Holmstrom, P.
Thylen, L.
Bratkovsky, A.
JOURNAL OF APPLIED PHYSICS, 2010, 107 (06)
[8] DIELECTRIC-CONSTANTS OF SILICON QUANTUM DOTS
WANG, LW
ZUNGER, A
PHYSICAL REVIEW LETTERS, 1994, 73 (07) : 1039 - 1042
[9] Electron-Hole Confinement Symmetry in Silicon Quantum Dots
Mueller, Filipp
Konstantaras, Georgios
Spruijtenburg, Paul C.
van der Wiel, Wilfred G.
Zwanenburg, Floris A.
NANO LETTERS, 2015, 15 (08) : 5336 - 5341
[10] SILICON QUANTUM DOTS GROWTH IN SiNx DIELECTRIC: A REVIEW
Panchal, A. K.
Rai, D. K.
Mathew, M.
Solanki, C. S.
NANO, 2009, 4 (05) : 265 - 279

← 1 2 3 4 5 →