Thickness-dependent metal-to-insulator transition in epitaxial VO2 films

被引：0
作者：
Zhi, Bowen [1 ]
Gao, Guanyin [1 ]
Tan, Xuelian [1 ]
Chen, Pingfan [1 ]
Wang, Lingfei [1 ]
Jin, Shaowei [3 ]
Wu, Wenbin [1 ,2 ]
机构：
[1] Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei,230026, China
[2] High Magnetic Field Laboratory, Chinese Academy of Science (CAS), Hefei,230071, China
[3] School of Physics and Materials Science, Anhui University, Hefei,230039, China
来源：
Materials Research Express | 2015年 / 1卷 / 04期
关键词：
Vanadium dioxide;
D O I：
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摘要：
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