Thickness-dependent metal-to-insulator transition in epitaxial VO2 films

被引：0
作者：
Zhi, Bowen [1 ]
Gao, Guanyin [1 ]
Tan, Xuelian [1 ]
Chen, Pingfan [1 ]
Wang, Lingfei [1 ]
Jin, Shaowei [3 ]
Wu, Wenbin [1 ,2 ]
机构：
[1] Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei,230026, China
[2] High Magnetic Field Laboratory, Chinese Academy of Science (CAS), Hefei,230071, China
[3] School of Physics and Materials Science, Anhui University, Hefei,230039, China
来源：
Materials Research Express | 2015年 / 1卷 / 04期
关键词：
Vanadium dioxide;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [21] Modulation of the Phase Transition Behavior of VO2 Nanofilms by the Coupling of Zr Doping and Thickness-Dependent Band Gap
    Qin, Shuzhi
    Fan, Yicheng
    Qiu, Xiang
    Zhang, Kun
    Feng, Qingguo
    Gan, Gongwen
    Sun, Chengdu Wan
    Gou, Guoqing
    ACS APPLIED ELECTRONIC MATERIALS, 2022, 4 (12) : 6067 - 6075
  • [22] Metal-Insulator Transition in ALD VO2 Ultrathin Films and Nanoparticles: Morphological Control
    Peter, Antony P.
    Martens, Koen
    Rampelberg, Geert
    Toeller, Michael
    Ablett, James M.
    Meersschaut, Johan
    Cuypers, Daniel
    Franquet, Alexis
    Detavernier, Christophe
    Rueff, Jean-Pascal
    Schaekers, Marc
    Van Elshocht, Sven
    Jurczak, Malgorzata
    Adelmann, Christoph
    Radu, Iuliana P.
    ADVANCED FUNCTIONAL MATERIALS, 2015, 25 (05) : 679 - 686
  • [23] Effects of porous nano-structure on the metal-insulator transition in VO2 films
    Xu, Yuanjie
    Huang, Wanxia
    Shi, Qiwu
    Zhang, Yang
    Zhang, Yubo
    Song, Linwei
    Zhang, Yaxin
    APPLIED SURFACE SCIENCE, 2012, 259 : 256 - 260
  • [24] Thickness-modulated metal–insulator transition of VO2 film grown on sapphire substrate by MBE
    Jiming Bian
    Minhuan Wang
    Hongjun Sun
    Hongzhu Liu
    Xiaoxuan Li
    Yingmin Luo
    Yuzhi Zhang
    Journal of Materials Science, 2016, 51 : 6149 - 6155
  • [25] Constant threshold resistivity in the metal-insulator transition of VO2
    Cao, J.
    Fan, W.
    Chen, K.
    Tamura, N.
    Kunz, M.
    Eyert, V.
    Wu, J.
    PHYSICAL REVIEW B, 2010, 82 (24):
  • [26] Nonpercolative metal-insulator transition in VO2 single crystals
    Mun, Bongjin Simon
    Chen, Kai
    Yoon, Joonseok
    Dejoie, Catherine
    Tamura, Nobumichi
    Kunz, Martin
    Liu, Zhi
    Grass, Michael E.
    Mo, Sung-Kwan
    Park, Changwoo
    Lee, Y. Yvette
    Ju, Honglyoul
    PHYSICAL REVIEW B, 2011, 84 (11):
  • [27] Harnessing the Metal-Insulator Transition of VO2 in Neuromorphic Computing
    Schofield, Parker
    Bradicich, Adelaide
    Gurrola, Rebeca M.
    Zhang, Yuwei
    Brown, Timothy D.
    Pharr, Matt
    Shamberger, Patrick J.
    Banerjee, Sarbajit
    ADVANCED MATERIALS, 2023, 35 (37)
  • [28] Temperature-dependent infrared ellipsometry of Mo-doped VO2 thin films across the insulator to metal transition
    Amador-Alvarado, S.
    Flores-Camacho, J. M.
    Solis-Zamudio, A.
    Castro-Garcia, R.
    Perez-Huerta, J. S.
    Antunez-Ceron, E.
    Ortega-Gallegos, J.
    Madrigal-Melchor, J.
    Agarwal, V
    Ariza-Flores, D.
    SCIENTIFIC REPORTS, 2020, 10 (01)
  • [29] Joule Heating-Induced Metal-Insulator Transition in Epitaxial VO2/TiO2 Devices
    Li, Dasheng
    Sharma, Abhishek A.
    Gala, Darshil K.
    Shukla, Nikhil
    Paik, Hanjong
    Datta, Suman
    Schlom, Darrell G.
    Bain, James A.
    Skowronski, Marek
    ACS APPLIED MATERIALS & INTERFACES, 2016, 8 (20) : 12908 - 12914
  • [30] Temperature dependence of thermal conductivity of VO2 thin films across metal-insulator transition
    Kizuka, Hinako
    Yagi, Takashi
    Jia, Junjun
    Yamashita, Yuichiro
    Nakamura, Shinichi
    Taketoshi, Naoyuki
    Shigesato, Yuzo
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (05)
12345