Dry etching of SiO2 thin films with perfluoropropenoxide-O2 and perfluoropropene-O2 plasmas

被引:0
|
作者
Fracassi, Francesco [1 ]
D'Agostino, Riccardo [1 ]
Fornelli, Antonella [1 ]
Shirafuji, Tatsuru [2 ]
机构
[1] Fracassi, Francesco
[2] D'Agostino, Riccardo
[3] Fornelli, Antonella
[4] Shirafuji, Tatsuru
来源
Fracassi, F. (fracassi@chimica.uniba.it) | 1600年 / Japan Society of Applied Physics卷 / 41期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
页码:6287 / 6290
相关论文
共 50 条
  • [41] Diffusing behavior of MoO3 on Al2O3 and SiO2 thin films
    Xu, WM
    Yan, JF
    Wu, NZ
    Zhang, HX
    Xie, YC
    Tang, YQ
    Zhu, YF
    SURFACE SCIENCE, 2000, 470 (1-2) : 121 - 130
  • [42] Photoluminescence from Si nanocrystals embedded in In2O3/SiO2 glass thin films
    Matsumoto, Kimihisa
    Fujii, Minoru
    Hayashi, Shinji
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (4A): : 1779 - 1782
  • [43] PLASMA-ETCHING OF SI AND SIO2 IN SF6-O2 MIXTURES
    DAGOSTINO, R
    FLAMM, DL
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) : 162 - 167
  • [44] Influence of temperature on the etching rate of SiO2 in CF4+O2 plasma
    Knizikevicius, R
    Kopustinskas, V
    MICROELECTRONIC ENGINEERING, 2006, 83 (02) : 193 - 196
  • [45] Memory properties of SrBi2Ta2O9 thin films prepared on SiO2/Si substrates
    Xiong, SB
    Sakai, S
    APPLIED PHYSICS LETTERS, 1999, 75 (11) : 1613 - 1615
  • [46] Etching SiO2 films in aqueous 0.49% HF
    Somashekhar, A
    OBrien, S
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1996, 143 (09) : 2885 - 2891
  • [47] MECHANISMS OF THE HF/H2O VAPOR-PHASE ETCHING OF SIO2
    HELMS, CR
    DEAL, BE
    JOURNAL OF THE IES, 1992, 35 (03): : 21 - 26
  • [48] MECHANISMS OF THE HF/H2O VAPOR-PHASE ETCHING OF SIO2
    HELMS, CR
    DEAL, BE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (04): : 806 - 811
  • [49] THIN SIO2-FILMS NITRIDED IN N2O
    BELLAFIORE, N
    PIO, F
    RIVA, C
    MICROELECTRONICS JOURNAL, 1994, 25 (07) : 495 - 500
  • [50] The control of etching rate for various SiO2 films
    Kezuka, T
    Itano, M
    Ohmi, T
    CLEANING TECHNOLOGY IN SEMICONDUCTOR DEVICE MANUFACTURING, 2000, 99 (36): : 244 - 251